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 Power Transistors
2SC5063
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.00.3 1.50.1
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q q
1.5max.
1.1max.
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V
10.5min.
2.0
0.80.1
0.5max.
2.540.3 5.080.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2 6.00.3
1.5-0.4
V
2.0
3.0-0.2
A A A W C C
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 10V, IC = 0.2A, f = 10MHz IC = 0.8A, IB1 = 0.16A, IB2 = - 0.32A, VCC = 150V 25 0.7 2 0.3 400 15 8 1 1.5 V V MHz s s s min typ max 100 100 Unit A A V
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Transistors
PC -- Ta
40 2.0 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) TC=25C 1.8 IB=200mA
2SC5063
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=5
Collector power dissipation PC (W)
35 30 25 20 15 10 5 (2) (3) 0 0 20 40
Collector current IC (A)
1.6 1.4 1.2 1.0 60mA 0.8 0.6 0.4 0.2 0 40mA 30mA 20mA 10mA 120mA 100mA 80mA
3 TC=100C 1 25C 0.3 -25C 0.1
0.03
60
80 100 120 140 160
0
2
4
6
8
10
0.01 0.01
0.03
0.1
0.3
1
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
1000
hFE -- IC
IC/IB=5 VCE=5V 1000 300 100 30 10 3 1 0.3 1 0.01 0.1 0.001 0.003
fT -- IC
VCE=10V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
10
Forward current transfer ratio hFE
300
3 25C 1 TC=-25C 100C 0.3
100 25C TC=100C 30 -25C 10
0.1
0.03
3
0.01 0.01
0.03
0.1
0.3
1
3
0.03
0.1
0.3
1
Transition frequency fT (MHz)
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=150V TC=25C ton
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (s)
Collector current IC (A)
10 3 1 0.3 0.1 0.03 0.01 tf
10 3 IC 1 10ms 0.3 0.1 0.03 0.01 300ms
t=0.5ms 1ms
tstg
0.3
1
3
10
30
100
0
0.5
1.0
1.5
2.0
2.5
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
8 7 Lcoil=200H IC/IB1=5 (IB1=-IB2) TC=25C
2SC5063
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 ICP
-IB2
VCC
IC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
102 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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